Reducing surface states in a field-effect transistor

摘要

A method of manufacturing a field-effect semiconductor device having an electrode structure (13A, B, C) overlying a dielectric layer comprising a first layer (7) sealed by an overlying layer (9) wherein apertures (11) are formed in the sealing layer prior to forming the electrode structure to allow better access of gas to the substrate (1) during a subsequent annealing process to reduce fast surface states at the substrate/first layer interface.