Semiconductor integrated memory device.

摘要

A semiconductor integrated circuit memory device includes a memory cell array of integrated injection logic memory cells (Ce). The cells (Ce) are arranged in matrix form of columns and rows (R) with word lines (W) and bit lines (B) connected to the memory cells (Ce). The word lines (W) are formed by a semicondctor bulk and only a single current source (Q7) is provided for each word line (W) and this is connected around the mid point of each word line (W).