发明名称 |
Storage type photosensor containing silicon and hydrogen |
摘要 |
In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 1010 OMEGA xcm.
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申请公布号 |
US4255686(A) |
申请公布日期 |
1981.03.10 |
申请号 |
US19790039580 |
申请日期 |
1979.05.16 |
申请人 |
HITACHI, LTD. |
发明人 |
MARUYAMA, EIICHI;IMAMURA, YOSHINORI;ATAKA, SABURO;INAO, KIYOHISA;TAKASAKI, YUKIO;TSUKADA, TOSHIHISA;HIRAI, TADAAKI |
分类号 |
H01J29/45;H01L31/0248;(IPC1-7):H01J29/45;H01J31/38 |
主分类号 |
H01J29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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