| 摘要 |
PURPOSE:To smoothly etch an aluminum layer formed on an Si substrate in the semiconductor device and to eliminate aluminum residue thereon by heat treating the aluminum layer at high temperature when etching the aluminum layer to form a mask film thereon, and pretreating it using fluoric acid prior to the etching process. CONSTITUTION:An SiO2 film 2 is coated on the Si substrate 1, the aluminum layer 3 is evaporated on the entire surface thereof, and is heat treated at high temperature or 450 deg.C for 30min in N2 gas atmosphere. Then, a photoresist film 4 is coated on the entire surface, is exposed with light using a photomask 5, is then developed, and the film 4 is formed into desired pattern. Thereafter, before the layer 3 is etched, the entire surface is pretreated using fluoric acid, and the layer 3 is then etched to form predetermined pattern, and the film 4 is subsequently removed therefrom. In this manner, an Al2O3 film formed on the surface of the layer 3 can be effectively removed, and is not formed on the film 2 exposed with aluminum residue. |
