Voltage sense circuit

摘要

A voltage sense circuit in which first and second parallel connections of complementary MOS transistors are connected between a pair of signal lines connected to memory cells and outputs of a flip-flop circuit for detecting a potential change of the signal line caused by data readout from an accessed memory cell. MOS transistors of one channel type in the parallel connections are adapted to precharge output node capacitors of the flip-flop circuit to a supply voltage level, while MOS transistors of the other channel type are adapted to couple complementary output voltage levels of the flip-flop circuit produced after the data readout and operation of the flip-flop circuit to the signal lines. Use of the parallel connections of complementary MOS transistors enables the application of a single power source for producing gate signals of these MOS transistors.