| 摘要 |
<p>PURPOSE:To obtain pure green light emission in high light emitting efficiecy of the gallium phosphide green light emitting element by epitaxially growing in liquid phase in atmosphere added with NH3 to N type GaP and superimposing P type Gap by a liquid phase epitaxial growth. CONSTITUTION:An N type GaP containing no N2 is formed on a GaP substrate by a predetermined liquid phase epitaxial process. A doner is Si of a quartz reaction tube. Subsequently, H2 containing approx. 0.05% of NH3 is introduced thereinto at predetermined temperature to be reacted with Si introduced from the quartz in a furnace to form Si3N4 in Ga solution, and an N type GaP introduced with N is epitaxially formed. Mixture gas is stopped after it is retained at predetermined temperature for predetermined time to evaporate the N2 in the Ga solution, and the density is returned to that before introducing the NH3. The temperature of adding NH3 is so selected that, after the Si supplied from the quartz tube or the like is in infinitesimal amount to increase no Si density in Ga after stopping addition of the NH3, the thickness of the N type GaP grown thereafter is sufficiently high than the diffusing length of the minority carrier thereat. Consequently, P type GaP is laminated thereon. When the doner density of the N type GaP is altered stepwisely in this manner, the crystalline dislocation occurred from the substrate is reduced to obtain a pure green element having high light emitting efficiency in high reproducibility.</p> |
