MOLECULAR BEAM DEPOSITION PROCESS

摘要

PHB. 32,575. Method of making a semiconductor device which includes a III-V compound stratum. A film consisting of one of the elements Sn, Ge, Si, Be, Mn or Mg is deposited by a molecular beam epitaxy process on an exposed surface of the III-V compound stratum. A III-V compound layer doped with the element constituting the film is deposited over the film, when making, for example an F.E.T. An ohmic contact layer is deposited over the film to make an ohmic contact.