| 摘要 |
A planar, silicon barrier, Josephson junction and method of forming the junction which does not require expensive high-resolution, lithography techniques such as electron beam or x-ray. The method includes an etching mask-etch process which forms the basic structure configuration using a (110)-cut silicon wafer. Subsequent to the etching process the mask is removed and a superconducting film is deposited on the previously formed silicon surface to produce a single crystal silicon barrier with good electrical properties.
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