| 摘要 |
The inverted microstrip phase shifter consists of a substrate having at least one diode and biasing circuitry connected to one side and at least one center conductor connected to its opposite side. The substrate side containing a center conductor is enclosed within a hollow case so as to form an rf transmission line. The parameters for the biasing circuitry are selected by performing a computer optimization of the chain matrix equivalent expression for the voltage transmission coefficient.
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