| 摘要 |
PURPOSE:To remove perfectly a residual film resulting from development inclined to remain on nondeveloped areas, by processing with an etching agent a polyimide pattern obtained by heating a patternized polyimide precursor in thin film. CONSTITUTION:A film of a photosensitive polyimide precursor containing a photosensitive group, such as a vinyl or acrylic group, and a photosensitive compound, such as bichromate or quinonediazide is provided on a substrate, such as a aluminum plate, this film is patternwise exposed to light, and developed to remove the nonexposed areas, then it is heat-processed to convert said precursor pattern into a polyimide pattern. The obtained polyimide pattern is etched to perfectly remove a residual film resulting from development. As this etching agent, hydrazine alone or mixed with ethylene diamine is preferable, and this etching is carried out to an extent of approximate 1/5 film thickness reduction. |
