| 摘要 |
PURPOSE:To prevent the inversion of the electroconductive type of p-type Si crystal grown by the Czochralski process, by replacing the n-type changeable thickness portion of a p-type Si semiconductor substrate with polycrystalline Si. CONSTITUTION:A polycrystalline Si layer 3 is grown on the p-type Si semiconductor substrate 1. The obverse side of the substrate 1 is then ground by lapping or the like. An n-type Si semiconductor layer 2 is epitaxially grown on the lapped reverse side of the substrate 1. Aafter that, elements are manufactured in the layer 2. Since the n-type invertible portion of the substrate 1 is replaced with the polycrystalline substance independent of the inversion, no n-type inversion takes place in the substrate 1. As a result, the semiconductor device of high reliability is manufactured although additional processes such as the growth of the polycrystalline Si layer and the grinding of the substrate are needed. |
