发明名称 PATTERNING METHOD BY ELECTRON BEAM
摘要 PURPOSE:To reduce a proximity effect and to draw an accurate fine pattern, by changing the directions of the small patterning line distance and small figures of the fine pattern, with regard to the fine pattern. CONSTITUTION:When a side parallel with a patterning line approaches it, the width of a figure becomes the maximum and a large proximity effect is produced because the patterning line and the parallel side are affected by each other. When the side of a figure perpendicularly intersecting patterning lines having a large distance from each other approaches the line, the width becomes the minimum and the proximity effect is small. On the basis of these facts, a side perpendicularly intersecting a patterning line is utilized to increase the minimum distance 3 between figures 5, 6. As a result, an error that the minimum distance 3 is reduced by the expansion of the figures is limited to 1/2 or less. The influence of expansion upon a relatively small distance 4 and a relatively large distance 7 can be also diminished.
申请公布号 JPS5621322(A) 申请公布日期 1981.02.27
申请号 JP19790096135 申请日期 1979.07.30
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 UTAKA MASATOSHI;SUGIYAMA HISASHI
分类号 H01L21/027;H01J37/317;(IPC1-7):01L21/30 主分类号 H01L21/027
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