| 摘要 |
PURPOSE:To improve annealing effect for source layer and drain layer remarkably, by protecting the top of a channel section with metallic film and radiating laser beam thereon. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are prepared on a p- type Si substrate 1. And a gate electrode 4 is formed by piling a doped poly Si in layer and providing a laser beam reflecting mask 5, such as W, etc. And then, a source and a drain are selectively annealed by injecting As ion to form an n<+>-type source 6 and a drain 7, and also by radiating laser beam appropriately. Then, it is finished by providing an insulation film, an electrode and a wiring in accordance with the usual manner. Because of the reflecting mask 5, the laser beam never reaches a channel forming region of the substrate, and therefore, the selective annealing can be achieved extremely satisfactorily. |
