| 摘要 |
<p>A low pressure, hot wall, chemical vapour deposition reactor consists of a quartz cylinder which contains substrate platelets, mounted perpendicular to its longitudinal axis, and is provided with gas feed piping at one end and an opening for gas escape and pumping at the other end. The gas feed piping is connected to an injector which has gas outlet holes staggered along that part of its length which is situated in the central zone of the reactor. Pref. the injector consists of a quartz tube which is mounted along the internal wall of the reactor. The reactor is useful in the semiconductor industry, e.g. to form opt. doped polycrystalline silicon, silicon nitride, pyrolytic silica or molybdenum films on silicon wafers. Provision of the injector allows more homogeneous deposits to be formed on a greater number of substrates simultaneously, at increased deposition rates and with reduced consumption of reaction gas.</p> |
