| 摘要 |
PURPOSE:To enhance yield and reliability, by using a P-type Si substrate which is made by the czochralski process from P-type Si single crystal previously doped to a high concentration and has a high oxygen content. CONSTITUTION:The P-type Si substrate, which is doped with a P-type impurity to a high concentration to expect the P-type substrate to change into the N-type, is used for an IC, which is treated with heat at 300-500 deg.C for a long time. Such an Si substrate is used that after the IC is manufactured, oxygen changed into a donor by the heat treatment cancels the P-type impurity in the Si substrate and the resistivity becomes 10-20omega.cm as if a low concentration of P-type impurity were contained. As a result, the capacity of junction between the Si substrate and an epitaxial layer can be reduced. The concentration of the P-type Si substarate is selected in view of the conditions of the heat treatment to enhance yield and reliability with the P-type Si substrate which is manufactured by the CZ process and has a high oxygen content. |
