| 摘要 |
<p>PURPOSE:To obtain a plurality of unit cells simultaneously in batches by sticking a multielement semiconductor wafer on a supporting plate on which dicing lines are previously formed, forming infrared-ray elements on the wafer, thereafter performing dicing at the same time. CONSTITUTION:Dicing lines 4 are crisscrossly formed on a supporting plate 3 made of ceramics, sapphire, and the like which support infrared-ray detecting elements, corresponding to the size of the unit cell 9 beforehand. A multielement wafer 7 is attached to all the surface of said supporting plate 3 by using a bonding agent 5. Then, individual unit element 9 is formed on the portion surrounded by the lines 4 on the wafer 7. With the lines 4 as a reference, the portion to be diced is etched out by using lithography technology, thereby the wafer 7 is separated into the unit element 9. In this method, as compared with the scribing method to be performed after the formation of the elements, the yield and performance are enhanced, and the simultaneous manufacture of a plurality of elements in batches can be accomplished.</p> |
