发明名称 CCD RADIATION SENSOR
摘要 <p>PHB. 32,544. A charge coupled circuit arrangement for converting an electromagnetic radiation pattern in a certain wavelength band into electrical signals comprises a semiconductor body having a first layer-shaped part and an adjoining second layershaped part contiguous with the first layer-shaped part. The first layer-shaped part consists of semiconductor material having a charge transfer register for transferring, in the first layer, carriers representative of pattern information. The second layer-shaped part consists of a photosensitive semiconductor material capable of yielding free charge carriers when subjected to radiation of a certain wavelength band. The circuit arrangement connected to the device includes a means to cause locally, at positions associated-with storage sites in the first layer-shaped part, the punch-through to the second layer-shaped part of a depletion region formed in the first layer-shaped part. This enables the direct introduction of radiation generated free charge carriers characteristic of a single conductivity type from the second layer-shaped part into the storage sites, these storage sites being associated with the charge transfer register.</p>
申请公布号 CA1096498(A) 申请公布日期 1981.02.24
申请号 CA19770275064 申请日期 1977.03.29
申请人 N.V. PHILIPS'GLOEILAMPENFABRIEKEN 发明人 SHANNON, JOHN M.
分类号 H04N5/33;G11C11/401;G11C27/04;H01L21/339;H01L27/148;H01L29/762;H01L29/768;H04N5/335;(IPC1-7):11C11/40 主分类号 H04N5/33
代理机构 代理人
主权项
地址