| 摘要 |
PURPOSE:To avoid the exposure of a semiconductor layer and to obtain the desired hight of the barrier by providing platinum silicide not only in a window but also on the insulating film around the window in the case the insulating film is deposited on the semiconductor layer, a window is opened, and a Schottky junction comprising a platinum silicide film is formed. CONSTITUTION:An N-type layer 12 is epitaxially grown on an N<+>-type Si substrate 11, and all the surface is covered by an SiO2 film 13. A window is opened and the layer 12 is exposed. Then, an Si layer 14 is grown on the surface including the window. Thereafter, said layer 14 is removed by photoetching, with only the side wall and the bottom of the wondow and the vicinity of the window being remained; and a Pt film 15 is deposited on all the surfaces. Then, sintering treatment is performed and the film 15 is reacted with the layer 14 with the layer 12 underneath said layer 14, and transformed into a platinum silicide film 16. Non- reacted film 15 is removed by using aqua regia. At this time, since a thin impurity layer 17 is formed on the film 16, the film 16 is not encroached. Then, an electrode 18 is deposited on all of the surface. In this method, the layer 12 is not exposed and the excellent Schottky junction of platinum silicide and Si can be obtained. |
