Epitaxial wafer for use in production of light emitting diode

摘要

An epitaxial wafer of GaAs1-xPx has been doped with nitrogen and used for the production of light emitting diode (LED). The carrier concentration of the conventional GaAs1-xPx was from 3x1016 to 2x1017/cm3. According to the present invention, the carrier concentration is reduced lower than the conventional concentration and the luminance of LED is increased approximately two or three times the conventional luminance.