| 发明名称 |
SEMICONDUCTOR RAM CELLS HAVING SUPERIMPOSED CAPACITORS |
| 摘要 |
<p>PHN 8299 16.10.1976 In a 1 MOS/bit memory a high packing density is obtained by shifting the capacitors of adjacent columns one into the other in such manner that two capacitors belonging to different columns are formed by three conductive layers which are situated one above the other, the central layer can be connected to reference potential, the uppermost layer is connected to the MOST in the column and the lowermost layer is connected to a MOST in the other column.</p> |
| 申请公布号 |
CA1096499(A) |
申请公布日期 |
1981.02.24 |
| 申请号 |
CA19770270915 |
申请日期 |
1977.02.02 |
| 申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
SALTERS, ROELOF H. W. |
| 分类号 |
G11C11/401;G11C11/404;H01L21/8234;H01L21/8242;H01L27/07;H01L27/088;H01L27/10;H01L27/108;H01L29/78;(IPC1-7):11C11/08 |
主分类号 |
G11C11/401 |
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