MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To obtain a precise pattern of an insulating layer without performing pattern alignment by a method wherein a photo resist layer having a prescribed shape and provided on a semiconductor substrate is covered with the insulating layer and the insulating layer on the resist layer is stripped off by lift off technique. CONSTITUTION:The photo resist layer 61 having the prescribed pattern is formed on the semiconductor substrate 1 having element isolating regions 3 formed thereon, the first insulating layer 62 is formed on the entire surface of it by the sputtering method and the insulating layer 62 on the resist layer 61 is stripped off together with the resist to form the second insulating layer 8 having the prescribed pattern provided with the first insulating layer 62. By this way, the insulating layer 8 having the precise pattern can easily be formed omitting the high precision necessitating pattern alignment and a part of the etching process to obtain gate insulating layers 9 and conductive layers 10 for gate electrodes on the regions of source 5, drain 6 and channel 7.