Semiconductor contact resistance reduction - by sawtooth or other magnified contact surfaces

摘要

A semiconductor device is bounded at least one side by a metal electrode which contacts it without any barrier. The contact area between semiconductor and metal electrode has been increased by designing the contact area in cross-section with an undulating, sawtooth, or meandering profile. The periodicity of the alternating structure is at least equal to the thickness of the space charge region of the metal-semiconductor tunnel contact. This reduces the contact resistance of multi-layer semiconductor devices with a barrier layer between the layers.