| 发明名称 |
HIGH FREQUENCY SPUTTERING APPARATUS |
| 摘要 |
Isolating the anode shield of RF sputtering apparatus from the ground potential reduces the grounded surfaces to which the plasma is exposed and thereby increases the impedance between the plasma and the grounded surfaces. This improvement increases the resputtering rate significantly before the operating point of instability in the system is reached. |
| 申请公布号 |
DE2860318(D1) |
申请公布日期 |
1981.02.19 |
| 申请号 |
DE19782860318 |
申请日期 |
1978.11.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BIALKO, JOSEPH ALFON;LECHATON, JOHN S. |
| 分类号 |
C23C14/04;C23C14/34;C23C14/40;C23C14/44;C23C14/50;(IPC1-7):H01J37/34 |
主分类号 |
C23C14/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
