| 摘要 |
PURPOSE:To prevent a film reduction of a photoresist film in exposure by applying a negative photoresist prepared by adding a specified amount of a crosslinking agent to a resin component to the surface of a substrate followed by projection exposure. CONSTITUTION:The content of a crosslinking agent in a polyisoprene type negative photoresist is adjusted to 4-5.5 wt.%, and this resist is applied to the surface of substrate 4 to form polyisoprene type negative photoresist film 1. Projection exposure is then performed. Thus, a film thickness reduction of photoresist film 1 is reduced considerably to prevent film 1 from breaking at shoulders 5 of a surface protrusion of substrate 5, and a minute pattern can be formed on substrate 4 with accuracy. |
