METHOD OF PRODUCING INSULATING FILM FOR SEMICONDUCTOR SURFACES AND SEMICONDUCTOR DEVICE WITH SUCH FILM.

摘要

Method of producing an insulating film for semiconductor surfaces is claimed in which a silicon wafer is first subjected to direct nitriding in nitrogen gas to give a silicon nitride film of a certain thickness, and then nitriding is continued in an atmosphere of ammonia gas or inert gas contg. ammonia. The silicon nitride film is dense and thick enough for masking operations.