发明名称 |
PROCEDIMIENTO DE FABRICACION DE ARTICULOS ESPECIALMENTE UTI-LES EN LA FABRICACION DE CIRCUITOS INTEGRADOS DE GRAN ESCALA |
摘要 |
<p>Ion beam lithography of particular interest in the fabrication of large-scale integrated circuits of unexpectedly increased throughput results from appropriate choice of (a) resist material and (b) ion species. Resist material, generally negative acting, is characterized by electron beam sensitivity inadequate for ordinary commercial electron beam lithography. The relevant characteristic responsible for inadequate electron beam sensitivity is the very characteristic responsible for enhanced ion sensitivity. Ion species, always of atomic number greater than that of proton, are dictated by the observation that sensitivity unexpectedly increases at a greater rate than predictable on traditional bases.</p> |
申请公布号 |
ES491874(D0) |
申请公布日期 |
1981.02.16 |
申请号 |
ES19800491874 |
申请日期 |
1980.05.27 |
申请人 |
WESTERN ELECTRIC COMPANY,INC. |
发明人 |
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分类号 |
G03F7/00;G03F7/038;G03F7/20;H01L21/027;H01L21/30;H05K3/06 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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