| 摘要 |
PURPOSE:To eliminate the inductance component and enlarge the current capacity of the semiconductor device by a method wherein sources, drains and gates of plural field effect transistors formed to have rectangular plane channel regions are respectively connected in electrical common. CONSTITUTION:On a main surface of a semiconductor substrate 1, source regions 2a-2d separated independently with each other and are reverse conductive to the substrate, and drain regions 3a-3d confronting to those regions and are separated independently with each other are provided so as channel regions are not bent and to form rectangular planes. Gate electrodes 4a-4d sticked on the channel regions putting gate insulating films between the channel regions are connected in electrical common by gate electrode wirings 5-8. The source regions 2a-2d and the drain regions 3a-3d are also connected respectively in common by electrode wirings 9-12 and 13-16. |
