| 摘要 |
PURPOSE:To reduce the contact resistance between an electrode and a substrate by cleaving a substrate on its plane parallel to a crystal grown plane, by forming a P-N type junction with a protective film coated on the plane of the cleavage and by providing an electrode on the exposed plane of said cleavage. CONSTITUTION:First, a substrate of an N-type lead-sulphur-selenium semiconductor 11 is cleaved on its plane parallel to a crystal grown plane, an insulating MgF2 protective film 13 is formed by evaporation on said plane of cleavage 12, a portion of the N-type lead-sulphur-selenium semiconductor is changed to a P-type by diffusing SSe and then MgF2 is removed with hydrofluoric acid. Then, a photoresist film is coated on the substrate surface, a photomask is placed and it is exposed, photoresist films 16A, 16B and 16C of the prescirbed pattern are formed after the photoresist film on the exposed portion has been removed and then a mesa-etching is performed. |
