| 摘要 |
Large single crystals of Pb1-x-Snx-Te are grown in a near-equilibrium condition by applying a minimal driving force such that a high degree of growth reliability is achieved. The process utilized allows the growth mechanism to take place approximately 50 DEG C. below the melting point of the charge materials. Crystals grown by this process are ultra pure and exhibit substantially improved compositional and crystallographic homogenuity throughout.
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