Semiconductor devices having VMOS transistors and VMOS dynamic memory cells

摘要

A semiconductor device has VMOS transistors and VMOS dynamic memory cells which are formed on the same semiconductor substrate of a first conductivity type. A buried layer of the opposite conductivity type is formed between the substrate and an epitaxial layer having V-grooves for the VMOS dynamic memory cells. In the buried layer are formed buried layers of the first conductivity type serving as sources and capacitors for the VMOS dynamic memory cells.