Method of removing contaminating impurities from device areas in a semiconductor wafer

摘要

High energy ions are implanted at both the device areas (11-11) on a semiconductor wafer 10 to form electrical devices (15-15) and at areas (14-14) remote therefrom. The device areas (11-11) are then selectively laser recrystallized to repair damage caused by the ion implantation and the wafer (10) is placed in a furnace for a time and at a temperature sufficient to cause gettering of contaminating impurities to the damage remote areas (14-14).