| 摘要 |
A bipolar transistor comprises a pair of monocrystalline semiconductor discs, plates or chips, one n-doped and one p-doped, one of the discs, plates or chips providing the base region and having an oppositely doped emitter region and a base/emitter p-n junction, and both of the discs, plates or chips having a structure of parallel ridges which face, cross and touch when the discs plates or chips are assembled together under mechanical pressure, the surfaces of the side edges of the ridges on the other of the discs being highly doped with the conductivity type of the base region whereby the contact surfaces between the ridges form parallel connected base/collector p-n junctions as a result of plastic deformation of the semiconductor material. The invention also includes a method of making such a bipolar transistor. |
