Process for depositing a III-V semi-conductor layer on a substrate

摘要

A process for depositing a layer of a semiconductor composition comprising elements M(III) and M'(V) selected from group III and group V elements, respectively onto a substrate. The process comprises: contacting the substrate with a coordination compound in the gaseous phase, the compound having the formula: <IMAGE> wherein M(III) and M'(V) are bonded to one another by a donor/acceptor bond and wherein R1, R2, R3, R4, R5, and R6 are chemical radicals other than hydrogen with at least one of the radicals R1, R2, and R3 being an electron donor serving to stabilize the donor/acceptor bond between elements M(III) and M'(V). The process further comprises decomposing the coordination compound so as to break the chemical bonds between the radicals and the elements M(III) and M'(V) without breaking the donor/acceptor bond, so as to cause the semi-conductor composition to deposit onto the substrate. Substrates having a semi-conductor layer comprising elements selected from groups III and V deposited by the process of the invention are also disclosed.