| 摘要 |
PURPOSE:To obtain an ion injection mask which its formation is easy, a mask layer is not fluidized and deformed even at high current density, and accurate selective injection is possible, in ion injection. CONSTITUTION:A polyimide group high molecular resin film 3 is formed on a semiconductor substrate directly or in a shape that holds a silicon dioxide film 2 at several mum according to a rotary applying method. A photosensitive resin film 4 is applied on the whole surface, and a fixed pattern is formed according to a normal photograph etching method. The said polyimide group high molecular resin film is etched by a mixed solution of hydrazin and ethylene amine or a spatter etching method, using the said photosensitive resin film pattern as a mask, and the said semiconductor substrate is exposed. The pattern of the said photosensitive resin film 4 is removed, and an injection layer 5 of impurities ions (I) is formed only to an exposing region of the said semiconductor substrate by means of an ion injection method, using the said polyimide group high molecular resin film as an injection mask. |
