| 摘要 |
PURPOSE:To obtain a device of high quantum efficiency by using SiO2 added with PdO as a material when forming a reflection preventing film on the light receiving surface of a light receiving device. CONSTITUTION:On a P-type Ge substrate 1, an SiO2 insulating film 5 is coated and a window 7 of ring shape is opened, and by diffusion N-type impurities in the substrate 1, an N-type guard ring region 2 is formed. Next, by removing the film 5 of a region surrounded by the window 7, a window 8 is formed, and by diffusing N-type impurities here, a shallow N<+>-type region 3 is formed. Then on this region, an SiO2 reflection preventing film 9 with a diameter slightly larger than the inner diameter of the ring region 2 is coated and a Pd layer 10 is coated on the film, and by heating to about 500 deg.C in oxidizing atmosphere and implanting PbO formed from the layer 10 into the film 9, a reflecting preventing film 6 is formed. Next, an Al electrode 4 is attached to a part of the region 3 exposed between the film 5 outside the ring 2 and the preventing film 6. |
