| 摘要 |
PURPOSE:To enable high withstand voltage without changing a process by a mechanism wherein slits are formed to an upper portion of a channel stopper of wiring crossing the upper portion of the channel stopper. CONSTITUTION:Slits 10 are formed into a Al wiring film 8 only of an upper portion of an N<+>-layer 9 for a channel stopper. Consequently, Al wiring on the layer 9 is apparently regarded as a plural strip of Al wiring, whose wiring width is thin. Thus, field concentration in a channel stopper portion is moderated, field strength at the center of wiring is decreased in the same manner as the case when wiring width is narrow, and pressure resistance is improved. As a result, high withstand voltage is enabled without changing a process. |
