| 摘要 |
PURPOSE:To make it possible to compose a static memory of four elements by supplying electric current to load transistors via a couple of digit lines and then by forming the load transistors in a couple of word-selecting transistors. CONSTITUTION:Word line W is held at a high level and transistors Tr1 and Tr2 are activated to write information to terminals A and B from a couple of digit lines. Next, digit line D is held at high level V1, and the other digit line at level V2 higher than low level VL. Then, turning off Tr1 and Tr2 holds terminals A and B at levels V1 and VL respectively. At this time, the couple of digit lines are set to level V1 at the same time. Next, a potential for compensating a fall in level at terminal A is supplied from line D via load Tr5. Consequently, terminal A can be held at the high level at any time. Here, the memory can be formed of four elements by forming load Tr5 and Tr6 in Tr1 and Tr2. |
