发明名称 MOS DYNAMIC MEMORY CIRCUIT
摘要 PURPOSE:To make it possible to manufacture a dymmy cell part easily in terms of layout by constituting capacitors of dymmy cells by coupling two capacitors of similar levels to those of dynamic cells in series. CONSTITUTION:Capacitors of dymmy cells are composed of two capacitors CD1 and CD2 connected in series. Each capacitor should be of substantially the same constitution with capacitor Cs of a one-transistor one-capacitor type MOS dynamic cell. Consequently, the capacity of the capacitor of the dymmy cell is reduced to a half that of capacitor Cs, providing the same operation with a conventional circuit. Further, since capacitors CD1 and CD2 have the same constitution with capacitor Cs, there is no trouble in terms of a pattern. Here, the area occupied by capacitors is a little in increase rate on the whole because several tens cells for one dymmy cell 1 are generally used on either right and left side of sense amplifier 11.
申请公布号 JPS5613590(A) 申请公布日期 1981.02.09
申请号 JP19790089228 申请日期 1979.07.16
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 OOTA KUNIKAZU
分类号 G11C11/401;G11C11/404 主分类号 G11C11/401
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