| 摘要 |
PURPOSE:To prevent deterioration of withstand voltage between electrodes by having the roundish-shaped semiconductor surface between two kinds of electrodes. CONSTITUTION:The shape of an angle 7 of the stepped section between a cathode layer 6 and a gate electrode lead out section 3 is gently sloped. Consequently, the adhesion of a passivation film 8 at this section is excellent. Moreover, as a resist film can be applied uniformly at the angle section, the passivation film 8 is not broken off when making an opening by photo etching. Accordingly, the oxide film 8 can be formed on the whole surface of the necessary section as a normal passivation film 8. |
