| 摘要 |
<p>PURPOSE:To check a write without enhancing write time by providing a control circuit which activates a write circuit corresponding to the bit of input data from an input terminal and to a redundancy memory cell write circuit, and which writes in said ordinary memory cell corresponding to the bit and in a redundancy memory cell. CONSTITUTION:A semiconductor memory device is provided with write redundancy memory cell switching circuits 41-48, and a mode setting signal generating circuit 19 which outputs a mode setting signals 18 to write in a redundancy memory cell array 15 and in plural ordinary memory cell arrays 91-98 simultaneously. Besides this, redundancy memory cell write control circuits 171-178 which controls to output data inputted to data input buffers 21-28 therefrom to write circuits 61-68 and a redundancy memory cell write circuit 12 upon receiving the signal 18, is added. As a result, data is written simultaneously in the memory array 15 and those 91-98, as well as the writes are checked, without enhancing the write time.</p> |
