| 摘要 |
<p>PURPOSE:To simplify wiring work and connection work by forming plural light emitting diodes by selective diffusion wherein line electrodes and row electrodes separated by insulating layers are formed on the surface by evaporation. CONSTITUTION:Dotted light emitting diodes 2 which formed plural P layers by selectively diffusing zinc or the like, for example, are formed on a semiconductor substrate 1. Each light emitting diode 2 is arranged by electrically separating by isolation layers 4. A nitriding films 3 are formed on the isolation layers 4. Then, row electrodes 5 are formed in a straight line by evaporation or the like. Line electrodes 6 are also formed in a straight line through oxide films 7 by evaporation or the like.</p> |
