| 摘要 |
PURPOSE:To obtain the semiconductor device excellent in the heat resistance by forming resin layers on the surface of the semiconductor device with a polyquinoxaline layer and a polyimide layer thereon. CONSTITUTION:The polyphenyl quinoxaline resin layer 4 is formed by spin coating on the substrate which has the phosphorous doped SiO2 layer 3 provided on the silicon wafer 1 at a thickness of 3,000Angstrom . The polyimide layer 5 is formed on the resin layer 4 at a thickness of 0.5mum by spin coating. At this point, in the formation of the polyphonyl quinoxaline layer, curing is performed at 350 deg.C for 2hr while done so at 350 deg.C for 30min. In this manner, a compound layer is formed between a highly adhesive polyquinoxaline layer and a highly heat resistant polyimide layer as the protective layer of the resin sealed semiconductor device thereby yielding a semiconductor device excellent in the adhesivity and heat resistance. |
