| 摘要 |
<p>An array (10) of charge storage devices (11) each including a pair of closely coupled conductor-insulator-semiconductor celles (12; 14, 15), one a row line (X) connected cell (12) and the other a column line (Y) connected cell (14, 15), is provided on a common semiconductor substrate (21). Readout (81, 116) of the charges stored in a row of devices is accomplished by transferring the charge in each of the devices of an addressed (81) row of devices in one direction between the row line (X) connected cell (12) and the column line (Y) connected cells (14, 15) of a device in sequence (116) and sensing (71-73) the resultant current flow in the row line (X) of the addressed row of devices. Current sensing leads to simplified readout circuitry and operation. </p> |
