| 摘要 |
PURPOSE:To obtain the ballast effect of a semiconductor device and expand the safety operation region thereof by providing desired resistance value at connected wire and connecting the wire to separated emitter electrode. CONSTITUTION:A transistor element is mounted at the lead wire 2 of a package. The connecting pad of a base electrode 7 to emitter electrodes 8, 9 are connected at 12-14 to the package leads 10, 11 for base and emitter. The resistances of the wires 13, 14 are controlled to desired resistance, and the wires 13, 14 are connected to the lead 11. The length of the connecting wires are controlled to control the resistance of the wires. According to this method, the VCE (sat) of the transistor can be largely reduced as compared with the conventional transistor employing semiconductor resistor or the like, and the fabricating steps can also be shortened. |
