| 摘要 |
<p>In double conductor micro-electronic structures (3), prior to the low temperature deposition or growth of an insulating layer (8) over a polycrystalline conductor surface (4), is annealed using a beam of radiant energy, which causes it to become very smooth, thereby removing any surface spikes. The insulating layer placed thereover has remarkably improved insulation qualities heretofore unattainable at low temperatures. The beam of radiant energy is preferably applied in bursts of energy lasting for a sufficiently short duration so that implanted impurities in the silicon substrate do not redistribute. </p> |
