发明名称 |
SEMICONDUCTOR DEVICE MADE BY ION IMPLANTATION |
摘要 |
<p>Specification Specification Title of the Invention SEMICONDUCTOR DEVICE MADE BY ION IMPLANTATION The semiconductor device is suitable to fabricate an integrated circuit. A SiO2 insulating film is formed on one surface of a silicon substrate and a buried SiO2 layer is formed at a depth from the other surface of the substrate. A plurality of regions diffused with an impurity and used to fabricate a transistor is formed in a layer of the-substrate between the burried SiO2 layer and the other surface of the substrate. A plurality of electrodes-are formed on the other surface of the substrate so as to use said regions as the component elements of the transistor.</p> |
申请公布号 |
CA1095183(A) |
申请公布日期 |
1981.02.03 |
申请号 |
CA19780297435 |
申请日期 |
1978.02.22 |
申请人 |
NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION |
发明人 |
IZUMI, KATSUTOSHI;DOKEN, MASANOBU;ARIYOSHI, HISASHI |
分类号 |
H01L27/00;H01L21/02;H01L21/265;H01L21/331;H01L21/762;H01L21/86;H01L27/12;H01L29/06;H01L29/73;H01L29/78;H01L29/786;(IPC1-7):01L27/12 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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