发明名称 MODIFYING METHOD FOR PATTERN OF PHOTOMASK
摘要 PURPOSE:To facilitate the pattern modification without the formation of projections by applying a radiation or injecting impurity ions to a defect of a pattern formed on a glass substrate and by modifying the defect by using coloring of the substrate. CONSTITUTION:A fixed pattern 3 is formed on the glass substrate 2 to obtain the photomask 1, and when the pattern defect 4 such as a pinhole is produced in the pattern 3, the pattern function can be recovered by the following process. The shielding plate 8 is located above the faulty part 4, a radiation such as X-ray or gamma-ray is applied to the faulty part through the aperture 8a opened in the shielding plate 8, the optical concentration of the glass substrate 2 is heightened to color the substrate, simultaneously the pinhole is filled and the modified part 9, in which the defect has been eliminated is obtained. Here the radiation can be a proton beam, a neutron beam or alpha-ray, or impurity ions such as B<+>, As<+>, Ar<+> or the like can be injected into the faulty part.
申请公布号 JPS5610929(A) 申请公布日期 1981.02.03
申请号 JP19790086269 申请日期 1979.07.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 TANAKA KAZUHIRO
分类号 G03F1/00;G03F1/72;G03F1/74;H01L21/027 主分类号 G03F1/00
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