| 发明名称 |
HETEROSTRUCTURE SEMICONDUCTOR DEVICES |
| 摘要 |
<p>Self-completing semiconductor materials may be converted to p-conductivity by charged particle irradiation which rearranges the atoms in the crystal lattice and may then be used in a heterostructure semiconductor device to permit the including in the device of materials with a wide range of new properties.</p> |
| 申请公布号 |
CA1095154(A) |
申请公布日期 |
1981.02.03 |
| 申请号 |
CA19770282747 |
申请日期 |
1977.07.14 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
VAN VECHTEN, JAMES A.;WOODALL, JERRY M. |
| 分类号 |
H01L21/205;H01L21/22;H01L21/265;H01L29/20;H01L29/205;H01L29/207;H01L31/10;H01L33/00;H01S5/00;H01S5/323;(IPC1-7):01L21/30;01S3/19;01L29/36 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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