| 摘要 |
PURPOSE:To obtain a low power consumption and high integrity information inverting circuit which receives an input at a gate and produces an output from a drain by applying a forward voltage having an absolute value of less than the content potential of the junction between a source and a substrate with the source of an MOSFET as a reference thereto. CONSTITUTION:An N<+>-type source 2 and a drain 3 are formed in a P-type Si substrate including an impurity approx. 10<15>cm<-3> to form an insulated gate FET. When the input voltage at an input terminal IN is zero, a channel is not formed between the drain the source so that a current IDS is equal to zero. On the other hand, the junction between the source and the substrate is forwardly biased, and the drain 3, i.e., the output terminal is retained at prescribed potential VB of the substrate 1 due to the junction leakage current IBD>>IDS. When the input terminal voltage is altered to the VB, since it is higher than a threshold voltage, the source and the drain are conducted therebetween to thus become IDS>>IBD. Thus, the output voltage of the drain 3 becomes zero voltage of the source 2 to invert its operation. This configuration can form a low power consumption and high integrity information inverting circuit. |
