发明名称 ELECTRON BEAM TRANSFER DEVICE
摘要 PURPOSE:To obtain high resolution characteristics by a method wherein when an optical mask and a sample opposite to said mask are put in a vacuum vessel and ultraviolet rays are irradiated to the mask and voltage is applied between the mask and the sample to form a pattern on the sample, a superconductive coil is used to focus the magnetic flux. CONSTITUTION:The optical mask 3 of the quartz substrate 3a the lower surface of which is provided with Cr thin film mask pattern 3b and the CsI photoelectric surface 3C is put in the vessel 1 that is highly vacuumized by the vacuum pump 2, and the sample 4 the upper surface of which is provided with the electron beam sensitive resist 4a is placed under the mask 3 at a fixed interval. Next, the ultraviolet rays A from the light source 5 are irradiated to the mask 3 through the glass window 1a of the vessel 1, and simultaneously a high DC voltage from the power supply 6 is applied between the mask 3 and the sample 4 to produce the electron beam E there. In this configuration, the vessel 1 is surrounded by the cryostats 7a, 7b, which contains the superconductive coils 8a, 8b of NbTi wire cooled by liquid helium, to make the magnetic field B, which is applied to the beam E, uniform.
申请公布号 JPS5610927(A) 申请公布日期 1981.02.03
申请号 JP19790085563 申请日期 1979.07.06
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 SANO SHIYUNICHI;SHINOZAKI TOSHIAKI;MORI ICHIROU
分类号 H01L21/027;H01J37/317;H01L21/30;(IPC1-7):01L21/30 主分类号 H01L21/027
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